Other articles related with "light-emitting diode":
103301 Qun Zhang(张群), Xiaofei Wang(王晓菲), Zhimin Wu(吴智敏), Xiaofang Li(李小芳), Kai Zhang(张凯), Yuzhi Song(宋玉志), Jianzhong Fan(范建忠), Chuan-Kui Wang(王传奎), and Lili Lin(蔺丽丽)
  Effect of aggregation on thermally activated delayed fluorescence and ultralong organic phosphorescence: QM/MM study
    Chin. Phys. B   2023 Vol.32 (10): 103301-103301 [Abstract] (111) [HTML 0 KB] [PDF 5824 KB] (10)
58503 Yi-Wei Cao(曹一伟), Quan-Jiang Lv(吕全江), Tian-Peng Yang(杨天鹏), Ting-Ting Mi(米亭亭),Xiao-Wen Wang(王小文), Wei Liu(刘伟), and Jun-Lin Liu(刘军林)
  Realization of high-efficiency AlGaN deep ultraviolet light-emitting diodes with polarization-induced doping of the p-AlGaN hole injection layer
    Chin. Phys. B   2023 Vol.32 (5): 58503-058503 [Abstract] (163) [HTML 1 KB] [PDF 760 KB] (82)
18507 Yuhui Dong(董宇辉), Danni Yan(严丹妮), Shuai Yang(杨帅), Naiwei Wei(魏乃炜),Yousheng Zou(邹友生), and Haibo Zeng(曾海波)
  Ion migration in metal halide perovskite QLEDs and its inhibition
    Chin. Phys. B   2023 Vol.32 (1): 18507-018507 [Abstract] (270) [HTML 0 KB] [PDF 4922 KB] (219)
68504 Pezhman Sheykholeslami-Nasab, Mahdi Davoudi-Darareh, and Mohammad Hassan Yousefi
  Modeling and numerical simulation of electrical and optical characteristics of a quantum dot light-emitting diode based on the hopping mobility model: Influence of quantum dot concentration
    Chin. Phys. B   2022 Vol.31 (6): 68504-068504 [Abstract] (270) [HTML 1 KB] [PDF 1170 KB] (72)
123302 Mu-Zhen Li(李慕臻), Fei-Yan Li(李飞雁), Qun Zhang(张群), Kai Zhang(张凯), Yu-Zhi Song(宋玉志), Jian-Zhong Fan(范建忠), Chuan-Kui Wang(王传奎), and Li-Li Lin(蔺丽丽)
  Theoretical verification of intermolecular hydrogen bond induced thermally activated delayed fluorescence in SOBF-Ome
    Chin. Phys. B   2021 Vol.30 (12): 123302-123302 [Abstract] (456) [HTML 0 KB] [PDF 5068 KB] (147)
88502 Hang Su(苏杭), Kun Zhu(朱坤), Jing Qin(钦敬), Mengyao Li(李梦瑶), Yulin Zuo(左郁琳), Yunzheng Wang(王允正), Yinggang Wu(吴迎港), Jiawei Cao(曹佳维), and Guolong Li(李国龙)
  Large-area fabrication: The next target of perovskite light-emitting diodes
    Chin. Phys. B   2021 Vol.30 (8): 88502-088502 [Abstract] (417) [HTML 1 KB] [PDF 8494 KB] (236)
128503 Saihu Pan(潘赛虎), Zhiqiang Zhu(朱志强), Kangping Liu(刘康平), Hang Yu(于航), Yingjie Liao(廖英杰), Bin Wei(魏斌), Redouane Borsali, and Kunping Guo(郭坤平)
  Reliability of organic light-emitting diodes in low-temperature environment
    Chin. Phys. B   2020 Vol.29 (12): 128503- [Abstract] (512) [HTML 1 KB] [PDF 685 KB] (284)
47802 Jiang-Dong Gao(高江东), Jian-Li Zhang(张建立), Zhi-Jue Quan(全知觉), Jun-Lin Liu(刘军林), Feng-Yi Jiang(江风益)
  Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection
    Chin. Phys. B   2020 Vol.29 (4): 47802-047802 [Abstract] (573) [HTML 1 KB] [PDF 901 KB] (144)
18503 Byung-Ryool Hyun, Mikita Marus, Huaying Zhong(钟华英), Depeng Li(李德鹏), Haochen Liu(刘皓宸), Yue Xie(谢阅), Weon-kyu Koh, Bing Xu(徐冰), Yanjun Liu(刘言军), Xiao Wei Sun(孙小卫)
  Infrared light-emitting diodes based on colloidal PbSe/PbS core/shell nanocrystals
    Chin. Phys. B   2020 Vol.29 (1): 18503-018503 [Abstract] (676) [HTML 1 KB] [PDF 1218 KB] (179)
17302 Qian Chen(陈潜), Songhe Yang(杨松鹤), Lei Dong(董磊), Siyuan Cai(蔡思源), Jiaju Xu(许家驹), Zongxiang Xu(许宗祥)
  Tetraalkyl-substituted zinc phthalocyanines used as anode buffer layers for organic light-emitting diodes
    Chin. Phys. B   2020 Vol.29 (1): 17302-017302 [Abstract] (510) [HTML 1 KB] [PDF 2018 KB] (104)
118103 Qianqian Wu(吴倩倩), Fan Cao(曹璠), Lingmei Kong(孔令媚), Xuyong Yang(杨绪勇)
  InP quantum dots-based electroluminescent devices
    Chin. Phys. B   2019 Vol.28 (11): 118103-118103 [Abstract] (694) [HTML 1 KB] [PDF 4160 KB] (328)
107803 Chang-Fu Li(李长富), Kai-Ju Shi(时凯居), Ming-Sheng Xu(徐明升), Xian-Gang Xu(徐现刚), Zi-Wu Ji(冀子武)
  Photoluminescence properties of blue and green multiple InGaN/GaN quantum wells
    Chin. Phys. B   2019 Vol.28 (10): 107803-107803 [Abstract] (698) [HTML 1 KB] [PDF 1958 KB] (116)
107801 Yanxu Chen(陈彦旭), Dongliang Xu(许栋梁), Kaikai Xu(徐开凯), Ning Zhang(张宁), Siyang Liu(刘斯扬), Jianming Zhao(赵建明), Qian Luo(罗谦), Lukas W. Snyman, Jacobus W. Swart
  Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC
    Chin. Phys. B   2019 Vol.28 (10): 107801-107801 [Abstract] (945) [HTML 1 KB] [PDF 1215 KB] (224)
87802 Qi Wang(王琦), Guo-Dong Yuan(袁国栋), Wen-Qiang Liu(刘文强), Shuai Zhao(赵帅), Lu Zhang(张璐), Zhi-Qiang Liu(刘志强), Jun-Xi Wang(王军喜), Jin-Min Li(李晋闽)
  Monolithic semi-polar (1101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate
    Chin. Phys. B   2019 Vol.28 (8): 87802-087802 [Abstract] (508) [HTML 1 KB] [PDF 1631 KB] (188)
58502 Guang Li(李光), Lin-Yuan Wang(王林媛), Wei-Dong Song(宋伟东), Jian Jiang(姜健), Xing-Jun Luo(罗幸君), Jia-Qi Guo(郭佳琦), Long-Fei He(贺龙飞), Kang Zhang(张康), Qi-Bao Wu(吴启保), Shu-Ti Li(李述体)
  Enhanced performance of AlGaN-based ultraviolet light-emitting diodes with linearly graded AlGaN inserting layer in electron blocking layer
    Chin. Phys. B   2019 Vol.28 (5): 58502-058502 [Abstract] (830) [HTML 1 KB] [PDF 494 KB] (264)
38502 Yan-Li Wang(王燕丽), Pei-Xian Li(李培咸), Sheng-Rui Xu(许晟瑞), Xiao-Wei Zhou(周小伟), Xin-Yu Zhang(张心禹), Si-Yu Jiang(姜思宇), Ru-Xue Huang(黄茹雪), Yang Liu(刘洋), Ya-Li Zi(訾亚丽), Jin-Xing Wu(吴金星), Yue Hao(郝跃)
  Double superlattice structure for improving the performance of ultraviolet light-emitting diodes
    Chin. Phys. B   2019 Vol.28 (3): 38502-038502 [Abstract] (709) [HTML 1 KB] [PDF 818 KB] (166)
18503 Lin-Yuan Wang(王林媛), Wei-Dong Song(宋伟东), Wen-Xiao Hu(胡文晓), Guang Li(李光), Xing-Jun Luo(罗幸君), Hu Wang(汪虎), Jia-Kai Xiao(肖稼凯), Jia-Qi Guo(郭佳琦), Xing-Fu Wang(王幸福), Rui Hao(郝锐), Han-Xiang Yi(易翰翔), Qi-Bao Wu(吴启保), Shu-Ti Li(李述体)
  Efficiency enhancement of ultraviolet light-emitting diodes with segmentally graded p-type AlGaN layer
    Chin. Phys. B   2019 Vol.28 (1): 18503-018503 [Abstract] (860) [HTML 1 KB] [PDF 746 KB] (174)
110701 Liping Wang(王立平), Wenbo Li(李文博), Yichao Xu(徐一超), Bobo Yang(杨波波), Mingming Shi(石明明), Jun Zou(邹军), Yang Li(李杨), Xinglu Qian(钱幸璐), Fei Zheng(郑飞), Lei Yang(杨磊)
  Effect of different bending shapes on thermal properties of flexible light-emitting diode filament
    Chin. Phys. B   2018 Vol.27 (11): 110701-110701 [Abstract] (751) [HTML 1 KB] [PDF 2603 KB] (140)
114401 Jun-Tian Tan(谭竣天), Shu-Fang Zhang(张淑芳), Ming-Can Qian(钱明灿), Hai-Jun Luo(罗海军), Fang Wu(吴芳), Xing-Ming Long(龙兴明), Liang Fang(方亮), Da-Peng Wei(魏大鹏), Bao-Shan Hu(胡宝山)
  Effect of graphene/ZnO hybrid transparent electrode on characteristics of GaN light-emitting diodes
    Chin. Phys. B   2018 Vol.27 (11): 114401-114401 [Abstract] (701) [HTML 1 KB] [PDF 1390 KB] (160)
98502 Xia Guo(郭霞), Qiao-Li Liu(刘巧莉), Hui-Jun Tian(田慧军), Chun-Wei Guo(郭春威), Chong Li(李冲), An-Qi Hu(胡安琪), Xiao-Ying He(何晓颖), Hua Wu(武华)
  Efficiency-enhanced AlGaInP light-emitting diodes using transparent plasmonic silver nanowires
    Chin. Phys. B   2018 Vol.27 (9): 98502-098502 [Abstract] (542) [HTML 1 KB] [PDF 1335 KB] (208)
86101 Abida Perveen, Xin Zhang(张欣), Jia-Lun Tang(汤加仑), Deng-Bao Han(韩登宝), Shuai Chang(常帅), Luo-Gen Deng(邓罗根), Wen-Yu Ji(纪文宇), Hai-Zheng Zhong(钟海政)
  Sputtered gold nanoparticles enhanced quantum dot light-emitting diodes
    Chin. Phys. B   2018 Vol.27 (8): 86101-086101 [Abstract] (732) [HTML 1 KB] [PDF 3859 KB] (237)
78102 Ya-Chuan Liang(梁亚川), Kai-Kai Liu(刘凯凯), Ying-Jie Lu(卢英杰), Qi Zhao(赵琪), Chong-Xin Shan(单崇新)
  Silica encapsulated ZnO quantum dot-phosphor nanocomposites: Sol-gel preparation and white light-emitting device application
    Chin. Phys. B   2018 Vol.27 (7): 78102-078102 [Abstract] (713) [HTML 1 KB] [PDF 1655 KB] (197)
37804 Jing-Jing Yang(杨景景), Qing-Qing Fang(方庆清), Wen-Han Du(杜文汉), Ke-Ke Zhang, Da-Shun Dong(董大舜)
  High mobility ultrathin ZnO p-n homojunction modulated by Zn0.85Mg0.15O quantum barriers
    Chin. Phys. B   2018 Vol.27 (3): 37804-037804 [Abstract] (551) [HTML 1 KB] [PDF 1060 KB] (217)
104402 Ming-Can Qian(钱明灿), Shu-Fang Zhang(张淑芳), Hai-Jun Luo(罗海军), Xing-Ming Long(龙兴明), Fang Wu(吴芳), Liang Fang(方亮), Da-Peng Wei(魏大鹏), Fan-Ming Meng(孟凡明), Bao-Shan Hu(胡宝山)
  Simulation on effect of metal/graphene hybrid transparent electrode on characteristics of GaN light emitting diodes
    Chin. Phys. B   2017 Vol.26 (10): 104402-104402 [Abstract] (586) [HTML 1 KB] [PDF 1555 KB] (288)
87311 Yangfeng Li(李阳锋), Yang Jiang(江洋), Junhui Die(迭俊珲), Caiwei Wang(王彩玮), Shen Yan(严珅), Ziguang Ma(马紫光), Haiyan Wu(吴海燕), Lu Wang(王禄), Haiqiang Jia(贾海强), Wenxin Wang(王文新), Hong Chen(陈弘)
  Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure
    Chin. Phys. B   2017 Vol.26 (8): 87311-087311 [Abstract] (939) [HTML 1 KB] [PDF 1381 KB] (357)
78503 Muna E. Raypah, Mutharasu Devarajan, Fauziah Sulaiman
  Evaluation of current and temperature effects on optical performance of InGaAlP thin-film SMD LED mounted on different substrate packages
    Chin. Phys. B   2017 Vol.26 (7): 78503-078503 [Abstract] (556) [HTML 1 KB] [PDF 2570 KB] (237)
28502 Min Guo(郭敏), Zhi-You Guo(郭志友), Jing Huang(黄晶), Yang Liu(刘洋), Shun-Yu Yao(姚舜禹)
  Improvement of the carrier distribution with GaN/InGaN/AlGaN/InGaN/GaN composition-graded barrier for InGaN-based blue light-emitting diode
    Chin. Phys. B   2017 Vol.26 (2): 28502-028502 [Abstract] (638) [HTML 1 KB] [PDF 385 KB] (320)
118506 Jia-Yong Lin(林家勇), Yan-Li Pei(裴艳丽), Yi Zhuo(卓毅), Zi-Min Chen(陈梓敏), Rui-Qin Hu(胡锐钦), Guang-Shuo Cai(蔡广烁), Gang Wang(王钢)
  High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H2O as an oxidizer
    Chin. Phys. B   2016 Vol.25 (11): 118506-118506 [Abstract] (735) [HTML 0 KB] [PDF 866 KB] (320)
117102 Qiang Li(李强), Yufeng Li(李虞锋), Minyan Zhang(张敏妍), Wen Ding(丁文), Feng Yun(云峰)
  Current spreading in GaN-based light-emitting diodes
    Chin. Phys. B   2016 Vol.25 (11): 117102-117102 [Abstract] (647) [HTML 1 KB] [PDF 1077 KB] (557)
78502 Yu Zhao(招瑜), Bingfeng Fan(范冰丰), Yiting Chen(陈义廷), Yi Zhuo(卓毅), Zhoujun Pang(庞洲骏), Zhen Liu(刘振), Gang Wang(王钢)
  Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer
    Chin. Phys. B   2016 Vol.25 (7): 78502-078502 [Abstract] (587) [HTML 1 KB] [PDF 486 KB] (387)
28501 Cheng Zhang(张诚), Hui-Qing Sun(孙慧卿), Xu-Na Li(李旭娜), Hao Sun(孙浩), Xuan-Cong Fan(范宣聪), Zhu-Ding Zhang(张柱定), Zhi-You Guo(郭志友)
  Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers
    Chin. Phys. B   2016 Vol.25 (2): 28501-028501 [Abstract] (738) [HTML 1 KB] [PDF 488 KB] (606)
127801 Liu Wei (刘炜), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Chen Ping (陈平), Liu Zong-Shun (刘宗顺), Zhu Jian-Jun (朱建军), Li Xiang (李翔), Liang Feng (梁锋), Liu Jian-Ping (刘建平), Yang Hui (杨辉)
  Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode
    Chin. Phys. B   2015 Vol.24 (12): 127801-127801 [Abstract] (802) [HTML 1 KB] [PDF 1354 KB] (451)
97202 Ma Li (马莉), Shen Guang-Di (沈光地), Gao Zhi-Yuan (高志远), Xu Chen (徐晨)
  Enhanced performances of AlGaInP-based light-emitting diodes with Schottky current blocking layers
    Chin. Phys. B   2015 Vol.24 (9): 97202-097202 [Abstract] (756) [HTML 1 KB] [PDF 414 KB] (348)
68505 Guo Xia (郭霞), Liu Qiao-Li (刘巧莉), Li Chong (李冲), Liu Bai (刘白), Dong Jian (董建), Shen Guang-Di (沈光地)
  Phosphor-free white light-emitting diodes
    Chin. Phys. B   2015 Vol.24 (6): 68505-068505 [Abstract] (574) [HTML 1 KB] [PDF 469 KB] (941)
67103 Wang Hai-Yan (王海燕), Lin Zhi-Ting (林志霆), Han Jing-Lei (韩晶磊), Zhong Li-Yi (钟立义), Li Guo-Qiang (李国强)
  Design of patterned sapphire substrates for GaN-based light-emitting diodes
    Chin. Phys. B   2015 Vol.24 (6): 67103-067103 [Abstract] (581) [HTML 1 KB] [PDF 4312 KB] (1348)
57802 Miao Yan-Qin (苗艳勤), Gao Zhi-Xiang (高志翔), Zhang Ai-Qin (张爱琴), Li Yuan-Hao (李源浩), Wang Hua (王华), Jia Hu-Sheng (贾虎生), Liu Xu-Guang (刘旭光), Tsuboi Taiju
  High color rendering index white organic light-emitting diode using levofloxacin as blue emitter
    Chin. Phys. B   2015 Vol.24 (5): 57802-057802 [Abstract] (697) [HTML 1 KB] [PDF 496 KB] (325)
56806 Zhao Yu-Kun (赵宇坤), Li Yu-Feng (李虞锋), Huang Ya-Ping (黄亚平), Wang Hong (王宏), Su Xi-Lin (苏喜林), Ding Wen (丁文), Yun Feng (云峰)
  Efficiency droop suppression in GaN-based light-emitting diodes by chirped multiple quantum well structure at high current injection
    Chin. Phys. B   2015 Vol.24 (5): 56806-056806 [Abstract] (669) [HTML 1 KB] [PDF 1056 KB] (432)
38503 Liu Ming-Gang (柳铭岗), Wang Yun-Qian (王云茜), Yang Yi-Bin (杨亿斌), Lin Xiu-Qi (林秀其), Xiang Peng (向鹏), Chen Wei-Jie (陈伟杰), Han Xiao-Biao (韩小标), Zang Wen-Jie (臧文杰), Liao Qiang (廖强), Lin Jia-Li (林佳利), Luo Hui (罗慧), Wu Zhi-Sheng (吴志盛), Liu Yang (刘扬), Zhang Bai-Jun (张佰君)
  Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes
    Chin. Phys. B   2015 Vol.24 (3): 38503-038503 [Abstract] (634) [HTML 0 KB] [PDF 839 KB] (597)
27801 Zheng Yan-Qiong (郑燕琼), William J. Potscavage Jr, Zhang Jian-Hua (张建华), Wei Bin (魏斌), Huang Rong-Juan (黄荣娟)
  Hole transporting material 5, 10, 15-tribenzyl-5H-diindolo[3, 2-a:3',2'-c]-carbazole for efficient optoelectronic applications as an active layer
    Chin. Phys. B   2015 Vol.24 (2): 27801-027801 [Abstract] (738) [HTML 0 KB] [PDF 339 KB] (586)
77802 Wei Na (魏娜), Guo Kun-Ping (郭坤平), Zhou Peng-Chao (周朋超), Yu Jian-Ning (于建宁), Wei Bin (魏斌), Zhang Jian-Hua (张建华)
  Pure blue and white light electroluminescence in a multilayer organic light-emitting diode using a new blue emitter
    Chin. Phys. B   2014 Vol.23 (7): 77802-077802 [Abstract] (485) [HTML 1 KB] [PDF 2175 KB] (815)
68502 Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Li Dan-Wei (李丹伟), Yi Han-Xiang (易翰翔), Ren Zhi-Wei (任志伟), Tong Jin-Hui (童金辉), Wang Xing-Fu (王幸福), Chen Xin (陈鑫), Zhao Bi-Jun (赵璧君), Wang Wei-Li (王伟丽), Li Shu-Ti (李述体)
  Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AlInGaN superlattice electron blocking layer
    Chin. Phys. B   2014 Vol.23 (6): 68502-068502 [Abstract] (806) [HTML 1 KB] [PDF 1549 KB] (571)
48502 Yang Bin (杨斌), Guo Zhi-You (郭志友), Xie Nan (解楠), Zhang Pan-Jun (张盼君), Li Jing (李婧), Li Fang-Zheng (李方正), Lin Hong (林宏), Zheng Huan (郑欢), Cai Jin-Xin (蔡金鑫)
  A GaN–AlGaN–InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED
    Chin. Phys. B   2014 Vol.23 (4): 48502-048502 [Abstract] (565) [HTML 1 KB] [PDF 1099 KB] (825)
28504 Wu Kui (吴奎), Wei Tong-Bo (魏同波), Lan Ding (蓝鼎), Zheng Hai-Yang (郑海洋), Wang Jun-Xi (王军喜), Luo Yi (罗毅), Li Jin-Min (李晋闽)
  Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography
    Chin. Phys. B   2014 Vol.23 (2): 28504-028504 [Abstract] (601) [HTML 1 KB] [PDF 588 KB] (841)
28502 Yu Xiao-Peng (喻晓鹏), Fan Guang-Han (范广涵), Ding Bin-Bin (丁彬彬), Xiong Jian-Yong (熊建勇), Xiao Yao (肖瑶), Zhang Tao (张涛), Zheng Shu-Wen (郑树文)
  Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer
    Chin. Phys. B   2014 Vol.23 (2): 28502-028502 [Abstract] (565) [HTML 1 KB] [PDF 947 KB] (1330)
17803 Bi Wen-Tao (毕文涛), Wu Xiao-Ming (吴晓明), Hua Yu-Lin (华玉林), Sun Jin-E (孙金娥), Xiao Zhi-Hui (肖志慧), Wang Li (王丽), Yin Shou-Gen (印寿根)
  Tandem white organic light-emitting diodes adopting a C60:rubrene charge generation layer
    Chin. Phys. B   2014 Vol.23 (1): 17803-017803 [Abstract] (530) [HTML 1 KB] [PDF 337 KB] (1318)
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  Large-scale SiO2 Photonic Crystal for High Efficiency GaN LEDs by Nanospherical-lens Lithography
    Chin. Phys. B    Vol. (): 0-0 [Abstract] (35) [HTML 0 KB] [PDF 0 KB] (4)
128502 Zhang Li-Chun (张立春), Zhao Feng-Zhou (赵风周), Wang Fei-Fei (王菲菲), Li Qing-Shan (李清山)
  Improvement in electroluminescence performance of n-ZnO/Ga2O3/p-GaN heterojunction light-emitting diodes
    Chin. Phys. B   2013 Vol.22 (12): 128502-128502 [Abstract] (507) [HTML 1 KB] [PDF 487 KB] (1077)
118504 Xiong Jian-Yong (熊建勇), Zhao Fang (赵芳), Fan Guang-Han (范广涵), Xu Yi-Qin (许毅钦), Liu Xiao-Ping (刘小平), Song Jing-Jing (宋晶晶), Ding Bin-Bin (丁彬彬), Zhang Tao (张涛), Zheng Shu-Wen (郑树文)
  Efficiency enhancement of an InGaN light-emitting diode with a p-AlGaN/GaN superlattice last quantum barrier
    Chin. Phys. B   2013 Vol.22 (11): 118504-118504 [Abstract] (724) [HTML 1 KB] [PDF 1726 KB] (556)
116801 Gao Zhi-Xiang (高志翔), Wang Hua (王华), Hao Yu-Ying (郝玉英), Miao Yan-Qin (苗艳勤), Xu Bing-She (许并社)
  Improved light extraction of organic light emitting diodes with a nanopillar pattering structure
    Chin. Phys. B   2013 Vol.22 (11): 116801-116801 [Abstract] (580) [HTML 1 KB] [PDF 3307 KB] (613)
108505 Xiong Jian-Yong (熊建勇), Xu Yi-Qin (许毅钦), Zhao Fang (赵芳), Song Jing-Jing (宋晶晶), Ding Bin-Bin (丁彬彬), Zheng Shu-Wen (郑树文), Zhang Tao (张涛), Fan Guang-Han (范广涵)
  Performance enhancement of an InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer
    Chin. Phys. B   2013 Vol.22 (10): 108505-108505 [Abstract] (648) [HTML 1 KB] [PDF 1907 KB] (1382)
106802 Wang Bo (王波), Su Shi-Chen (宿世臣), He Miao (何苗), Chen Hong (陈弘), Wu Wen-Bo (吴汶波), Zhang Wei-Wei (张伟伟), Wang Qiao (王巧), Chen Yu-Long (陈虞龙), Gao You (高优), Zhang Li (张力), Zhu Ke-Bao (朱克宝), Lei Yan (雷严)
  Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching
    Chin. Phys. B   2013 Vol.22 (10): 106802-106802 [Abstract] (792) [HTML 1 KB] [PDF 891 KB] (769)
98504 Wang Xing-Fu (王幸福), Tong Jin-Hui (童金辉), Zhao Bi-Jun (赵璧君), Chen Xin (陈鑫), Ren Zhi-Wei (任志伟), Li Dan-Wei (李丹伟), Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Yi Han-Xiang (易翰翔), Li Shu-Ti (李述体)
  Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers
    Chin. Phys. B   2013 Vol.22 (9): 98504-098504 [Abstract] (717) [HTML 1 KB] [PDF 437 KB] (538)
88504 Wang Tian-Hu (王天虎), Xu Jin-Liang (徐进良)
  Improved performance of InGaN light-emitting diodes with a novel sawtooth-shaped electron blocking layer
    Chin. Phys. B   2013 Vol.22 (8): 88504-088504 [Abstract] (635) [HTML 1 KB] [PDF 2681 KB] (1051)
88503 Ding Bin-Bin (丁彬彬), Zhao Fang (赵芳), Song Jing-Jing (宋晶晶), Xiong Jian-Yong (熊建勇), Zheng Shu-Wen (郑树文), Zhang Yun-Yan (张运炎), Xu Yi-Qin (许毅钦), Zhou De-Tao (周德涛), Yu Xiao-Peng (喻晓鹏), Zhang Han-Xiang (张瀚翔), Zhang Tao (张涛), Fan Guang-Han (范广涵)
  Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer
    Chin. Phys. B   2013 Vol.22 (8): 88503-088503 [Abstract] (565) [HTML 1 KB] [PDF 432 KB] (1467)
68505 Tong Jin-Hui (童金辉), Zhao Bi-Jun (赵璧君), Wang Xing-Fu (王幸福), Chen Xin (陈鑫), Ren Zhi-Wei (任志伟), Li Dan-Wei (李丹伟), Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Yi Han-Xiang (易翰翔), Li Shu-Ti (李述体)
  Droop improvement in blue InGaN light emitting diode with GaN/InGaN superlattice barriers
    Chin. Phys. B   2013 Vol.22 (6): 68505-068505 [Abstract] (623) [HTML 1 KB] [PDF 372 KB] (864)
48101 Chen Xia (陈夏), Liang Zhu-Hong (梁柱洪), Chen Zhan-Xu (陈湛旭), Yang Wei-Ming (杨伟明), Chen Tu-Fu (陈土福), Jin Chong-Jun (金崇君), Zhang Bai-Jun (张佰君)
  Tuning nano-pillar array for enhancing the photoluminescence extraction efficiency of GaN-based light-emitting diodes
    Chin. Phys. B   2013 Vol.22 (4): 48101-048101 [Abstract] (642) [HTML 1 KB] [PDF 427 KB] (1046)
47805 Jiang Rong (江蓉), Lu Hai (陆海), Chen Dun-Jun (陈敦军), Ren Fang-Fang (任芳芳), Yan Da-Wei (闫大为), Zhang Rong (张荣), Zheng You-Dou (郑有炓)
  Temperature-dependent efficiency droop behaviors of GaN-based green light-emitting diodes
    Chin. Phys. B   2013 Vol.22 (4): 47805-047805 [Abstract] (738) [HTML 1 KB] [PDF 330 KB] (2005)
26102 Yan Qi-Rong (严启荣), Yan Qi-Ang (闫其昂), Shi Pei-Pei (石培培), Niu Qiao-Li (牛巧利), Li Shu-Ti (李述体), Zhang Yong (章勇)
  Dual-blue light-emitting diode based on strain-compensated InGaN-AlGaN/GaN quantum wells
    Chin. Phys. B   2013 Vol.22 (2): 26102-026102 [Abstract] (858) [HTML 1 KB] [PDF 372 KB] (775)
18504 Chen Jun (陈峻), Fan Guang-Han (范广涵), Zhang Yun-Yan (张运炎)
  Improvement of characteristics of InGaN light-emitting diode by using a staggered AlGaN electron-blocking layer
    Chin. Phys. B   2013 Vol.22 (1): 18504-018504 [Abstract] (1063) [HTML 0 KB] [PDF 281 KB] (625)
128504 Wang Tian-Hu (王天虎), Xu Jin-Liang (徐进良)
  Improved efficiency droop characteristics in InGaN/GaN light-emitting diode with a novel designed last barrier structure
    Chin. Phys. B   2012 Vol.21 (12): 128504-128504 [Abstract] (1176) [HTML 1 KB] [PDF 210 KB] (788)
127201 Guo Wei-Ling (郭伟玲), Yan Wei-Wei (闫薇薇), Zhu Yan-Xu (朱彦旭), Liu Jian-Peng (刘建朋), Ding Yan (丁艳), Cui De-Sheng (崔德胜), Wu Guo-Qing (吴国庆)
  Analysis on electrical characteristics of high-voltage GaN-based light-emitting diodes
    Chin. Phys. B   2012 Vol.21 (12): 127201-127201 [Abstract] (1024) [HTML 1 KB] [PDF 462 KB] (3161)
119301 Chan Ka-Lok (陈嘉乐), Ling Liu-Yi (凌六一), Andreas Hartl, Zheng Ni-Na (郑尼娜), Gerrit Kuhlmann, Qin Min (秦敏), Sun You-Wen (孙友文), Xie Pin-Hua (谢品华), Liu Wen-Qing (刘文清), Mark Wenig
  Comparing different light-emitting diodes as light sources for long path differential optical absorption spectroscopy NO2 and SO2 measurements
    Chin. Phys. B   2012 Vol.21 (11): 119301-119301 [Abstract] (929) [HTML 1 KB] [PDF 802 KB] (658)
118502 Tong Jin-Hui (童金辉), Li Shu-Ti (李述体), Lu Tai-Ping (卢太平), Liu Chao (刘超), Wang Hai-Long (王海龙), Wu Le-Juan (仵乐娟), Zhao Bi-Jun (赵璧君), Wang Xing-Fu (王幸福), Chen Xin (陈鑫 )
  Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers
    Chin. Phys. B   2012 Vol.21 (11): 118502-118502 [Abstract] (1026) [HTML 1 KB] [PDF 168 KB] (1127)
108507 Shao Ming (邵茗), Guo Xu (郭旭), Chen Shu-Fen (陈淑芬), Fan Qu-Li (范曲立), Huang Wei (黄维)
  Efficient top-emitting white organic light emitting device with an extremely stable chromaticity and viewing-angle
    Chin. Phys. B   2012 Vol.21 (10): 108507-108507 [Abstract] (1070) [HTML 1 KB] [PDF 336 KB] (848)
98504 Tian Hua (田华), Liu Ji-Wen (刘技文), Qiu Kun (仇坤), Song Jun (宋俊), Wang Da-Jian (王达健)
  Color-converted remote phosphor prototype of multiwavelength excitable borosilicate glass for white light-emitting diodes
    Chin. Phys. B   2012 Vol.21 (9): 98504-098504 [Abstract] (1232) [HTML 1 KB] [PDF 239 KB] (769)
88504 Meng Ling-Chuan (孟令川), Lou Zhi-Dong (娄志东), Yang Sheng-Yi (杨盛谊), Hou Yan-Bing (侯延冰), Teng Feng (滕枫), Liu Xiao-Jun (刘小君), Li Yun-Bai (李云白 )
  White organic light-emitting diodes based on combined electromer and monomer emission in doubly-doped polymers
    Chin. Phys. B   2012 Vol.21 (8): 88504-088504 [Abstract] (1388) [HTML 1 KB] [PDF 144 KB] (1069)
83303 Yu Jian-Ning (于建宁), Zhang Min-Yan (张民艳), Li Chong (李崇), Shang Yu-Zhu (尚玉柱), Lü Yan-Fang (吕燕芳), Wei Bin (魏斌), Huang Wei (黄维)
  Fine-tuning the thicknesses of organic layers to realize high-efficiency and long-lifetime blue organic light-emitting diodes
    Chin. Phys. B   2012 Vol.21 (8): 83303-083303 [Abstract] (1404) [HTML 1 KB] [PDF 141 KB] (1242)
68506 Wu Le-Juan(仵乐娟), Li Shu-Ti(李述体), Liu Chao(刘超), Wang Hai-Long(王海龙), Lu Tai-Ping(卢太平), Zhang Kang(张康), Xiao Guo-Wei(肖国伟), Zhou Yu-Gang(周玉刚), Zheng Shu-Wen(郑树文), Yin Yi-An(尹以安), and Yang Xiao-Dong(杨孝东)
  Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers
    Chin. Phys. B   2012 Vol.21 (6): 68506-068506 [Abstract] (1313) [HTML 1 KB] [PDF 172 KB] (1076)
67202 Jiao Zhi-Qiang(焦志强), Wu Xiao-Ming(吴晓明), Hua Yu-Lin(华玉林), Mu Xue(穆雪), Bi Wen-Tao(毕文涛), Bai Juan-Juan(白娟娟), and Yin Shou-Gen(印寿根)
  Improved performance of organic light-emitting diodes with dual electron transporting layers
    Chin. Phys. B   2012 Vol.21 (6): 67202-067202 [Abstract] (1310) [HTML 1 KB] [PDF 407 KB] (1171)
58504 Chen Jun(陈峻), Fan Guang-Han(范广涵), Zhang Yun-Yan(张运炎), Pang Wei(庞玮), Zheng Shu-Wen(郑树文), and Yao Guang-Rui(姚光锐)
  Performance improvement of InGaN blue light-emitting diodes with several kinds of electron-blocking layers
    Chin. Phys. B   2012 Vol.21 (5): 58504-058504 [Abstract] (1583) [HTML 1 KB] [PDF 475 KB] (811)
58503 Su Yue-Ju(苏跃举), Wu Xiao-Ming(吴晓明), Hua Yu-Lin(华玉林), Shen Li-Ying(申利莹), Jiao Zhi-Qiang(焦志强), Dong Mu-Sen(董木森), and Yin Shou-Gen(印寿根)
  Highly efficient blue fluorescent OLEDs with doped double emitting layers based on p–n heterojunctions
    Chin. Phys. B   2012 Vol.21 (5): 58503-058503 [Abstract] (1704) [HTML 1 KB] [PDF 165 KB] (1479)
98503 Lu Tai-Ping(卢太平), Li Shu-Ti(李述体), Zhang Kang(张康), Liu Chao(刘超), Xiao Guo-Wei(肖国伟), Zhou Yu-Gang(周玉刚), Zheng Shu-Wen(郑树文), Yin Yi-An(尹以安), Wu Le-Juan(仵乐娟), Wang Hai-Long(王海龙), and Yang Xiao-Dong(杨孝东)
  The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer
    Chin. Phys. B   2011 Vol.20 (9): 98503-098503 [Abstract] (1450) [HTML 1 KB] [PDF 172 KB] (1752)
108504 Lu Tai-Ping(卢太平), Li Shu-Ti(李述体), Zhang Kang(张康), Liu Chao(刘超), Xiao Guo-Wei(肖国伟), Zhou Yu-Gang(周玉刚), Zheng Shu-Wen(郑树文), Yin Yi-An(尹以安), Wu Le-Juan(仵乐娟), Wang Hai-Long(王海龙), and Yang Xiao-Dong(杨孝东)
  Blue InGaN light-emitting diodes with dip-shaped quantum wells
    Chin. Phys. B   2011 Vol.20 (10): 108504-108504 [Abstract] (1267) [HTML 1 KB] [PDF 190 KB] (1097)
68101 He An-He(何安和), Zhang Yong(章勇), Zhu Xue-Hui(朱学绘), Chen Xian-Wen(陈献文), Fan Guang-Han(范广涵), and He Miao(何苗)
  Improved light extraction of GaN-based light-emitting diodes with surface-textured indium tin oxide electrodes by nickel nanoparticle mask dry-etching
    Chin. Phys. B   2010 Vol.19 (6): 68101-068101 [Abstract] (1390) [HTML 1 KB] [PDF 2200 KB] (1818)
57803 Ci Zhi-Peng(慈志鹏), Wang Yu-Hua(王育华), and Zhang Jia-Chi(张加弛)
  A novel yellow emitting phosphor Dy3+, Bi3+ co-doped YVO4 potentially for white light emitting diodes
    Chin. Phys. B   2010 Vol.19 (5): 57803-057803 [Abstract] (1239) [HTML 1 KB] [PDF 194 KB] (1303)
47802 Zhang Wei(张巍), Yu Jun-Sheng(于军胜), Huang Jiang(黄江), Jiang Ya-Dong(蒋亚东), Zhang Qing(张清), and Cao Kang-Li(曹康丽)
  Exciplex elimination in an organic light-emitting diode based on a fluorene derivative by inserting 4,4'-N,N'-dicarbazole-biphenyl into donor/acceptor interface
    Chin. Phys. B   2010 Vol.19 (4): 47802-047802 [Abstract] (1332) [HTML 1 KB] [PDF 172 KB] (976)
37804 Yan Guang(闫光), Zhao Su-Ling(赵谡玲), Xu Zheng(徐征), Zhang Fu-Jun(张福俊), Kong Chao(孔超), Zhu Hai-Na(朱海娜), Song Dan-Dan(宋丹丹), and Xu Xu-Rong(徐叙瑢)
  Electroluminescence quenching mechanism in Rubrene doped host-guest system
    Chin. Phys. B   2010 Vol.19 (3): 37804-037804 [Abstract] (1766) [HTML 1 KB] [PDF 210 KB] (979)
37801 Chen Fei-Peng(陈飞鹏), Xu Bin(徐斌), Zhao Zu-Jin(赵祖金), Tian Wen-Jing (田文晶), LÜ Ping(吕萍), and Im Chan
  White organic light-emitting diodes based on electroplex from polyvinyl carbazole and carbazole oligomers blends
    Chin. Phys. B   2010 Vol.19 (3): 37801-037801 [Abstract] (1800) [HTML 1 KB] [PDF 450 KB] (967)
37105 Wei Bin(魏斌), Liao Ying-Jie (廖英杰), Liu Ji-Zhong (刘纪忠), Lu Lin(路林), Cao Jin(曹进), Wang Jun (王军), and Zhang Jian-Hua (张建华)
  Dependence of charge trapping of fluorescent and phosphorescent dopants in organic light-emitting diodes on the dye species and current density
    Chin. Phys. B   2010 Vol.19 (3): 37105-037105 [Abstract] (1745) [HTML 1 KB] [PDF 990 KB] (1102)
107307 Long Hao(龙浩), Fang Hao(方浩), Qi Sheng-Li(齐胜利), Sang Li-Wen(桑丽雯), Cao Wen-Yu(曹文彧), Yan Jian(颜建), Deng Jun-Jing(邓俊静), Yang Zhi-Jian(杨志坚), and Zhang Guo-Yi(张国义)
  Invariable optical properties of phosphor-free white light-emitting diode under electrical stress
    Chin. Phys. B   2010 Vol.19 (10): 107307-107307 [Abstract] (1612) [HTML 1 KB] [PDF 2337 KB] (902)
3555 Wei Xiao-Dan(魏小丹), Cai Li-Yan(蔡丽艳), Lu Fa-Chun(鲁法春), Chen Xiao-Long(陈小龙), Chen Xue-Yuan(陈学元), and Liu Quan-Lin(刘泉林)
  Structure and luminescence of Ca2Si5N8:Eu2+ phosphor for warm white light-emitting diodes
    Chin. Phys. B   2009 Vol.18 (8): 3555-3562 [Abstract] (1690) [HTML 1 KB] [PDF 281 KB] (1845)
2725 Cao Jun-Song(曹峻松), Guan Min(关敏), Cao Guo-Hua(曹国华), Zeng Yi-Ping(曾一平), Li Jin-Min(李晋闽), and Qin Da-Shan(秦大山)
  The performance enhancement in organic light-emitting diode using a semicrystalline composite for hole injection
    Chin. Phys. B   2008 Vol.17 (7): 2725-2729 [Abstract] (1442) [HTML 1 KB] [PDF 725 KB] (602)
702 Li Yan (李岩), Zheng Rui-Sheng (郑瑞生), Feng Yu-Chun (冯玉春), Liu Song-Hao (刘颂豪), Niu Han-Ben (牛憨笨)
  Effects of the microstructure slab with pillars on light extraction of GaN light-emitting diode
    Chin. Phys. B   2006 Vol.15 (4): 702-707 [Abstract] (1574) [HTML 1 KB] [PDF 720 KB] (672)
796 Peng Ying-Quan (彭应全), Zhang Fu-Jia (张福甲), Song Chang-An (宋长安)
  Numerical investigations on the current conduction in bilayer organic light-emitting devices with ohmic injection of charge carriers
    Chin. Phys. B   2003 Vol.12 (7): 796-802 [Abstract] (1150) [HTML 0 KB] [PDF 269 KB] (559)
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